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| polyfet rf devices LP601 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. "Polyfet"TM process SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.60 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 4.0 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 35 TYP 7.0 WATTS OUTPUT ) MAX UNITS TEST CONDITIONS dB % 10;1 Relative Idq = 0.40 A, Vds = Idq = 0.40 A, Vds = 28.0 V, F =1,500 MHz 28.0 V, F =1,500 MHz VSWR Idq = 0.40 A, Vds = 28.0 V, F =1,500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 2 0.5 0.90 4.00 16.0 0.8 13.0 MIN 65 1.0 1 5 TYP MAX UNITS TEST CONDITIONS V mA uA V Mho Ohm Amp pF pF pF Ids = 0.10 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com LP601 POUT VS PIN GRAPH LP 6 0 1 P out/G a in vs P in F re q= 1 .5 G H z , V ds= 2 8 V dc, I dq= .4 A 10 13 13 8 P out 6 Gain 11 4 11 10 2 E fficiency @ 10 watts = 35% 0 0 0.2 0.4 0.6 P in in W a tts 0.8 1 10 9 12 12 CAPACITANCE VS VOLTAGE 100 L6B 1 DICE CAPACITANCE Coss CAPACITANCE IN PFS 10 Ciss 1 Crss 0.1 0 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE L6B 1 DIE IV 4 3.5 3 ID IN AMPS 2.5 2 1.5 1 0.5 0 0 vg=2v 2 4 Vg=4v 6 8 10 12 14 VDS IN Vg=6v VOLTS vg=8v 16 0 18 20 vg=12v ID & GM VS VGS L6B 1 DIE ID & GM Vs VG 10.00 Id in amps; Gm in mhos Id 1.00 0.10 gM 0.01 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com |
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